Paper
20 February 2007 CMOS color image sensor with overlaid organic photoconductive layers having narrow absorption band
Author Affiliations +
Proceedings Volume 6502, Digital Photography III; 650207 (2007) https://doi.org/10.1117/12.704788
Event: Electronic Imaging 2007, 2007, San Jose, CA, United States
Abstract
At EI2006, we proposed the CMOS image sensor, which was overlaid with organic photoconductive layers in order to incorporate in it large light-capturing ability of a color film owing to its multiple-layer structure, and demonstrated the pictures taken by the trial product of the proposed CMOS image sensor overlaid with an organic layer having green sensitivity. In this study, we have tried to get the optimized spectral sensitivity for the proposed CMOS image sensor by means of the simulation to minimize the color difference between the original Macbeth chart and its reproduction with the spectral sensitivity of the sensor as a parameter. As a result, it has been confirmed that the proposed CMOS image sensor with multiple-layer structure possesses high potential capability in terms of imagecapturing efficiency when it is provided with the optimized spectral sensitivity.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shunji Takada, Mikio Ihama, Masafumi Inuiya, Takashi Komatsu, and Takahiro Saito "CMOS color image sensor with overlaid organic photoconductive layers having narrow absorption band", Proc. SPIE 6502, Digital Photography III, 650207 (20 February 2007); https://doi.org/10.1117/12.704788
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Cited by 5 scholarly publications.
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KEYWORDS
Image sensors

Absorption

Optical filters

CMOS sensors

Color reproduction

Color difference

Electrodes

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