Paper
13 March 2007 Inspection with the Lasertec M7360 at the SEMATECH Mask Blank Development Center
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Abstract
Extreme ultraviolet lithography (EUVL) mask blanks must be free of printable defects. The SEMATECH Mask Blank Development Center (MBDC) is focused on driving down the defect density of EUVL mask blanks by providing a collaborative environment for EUVL mask substrate and equipment suppliers and a state-of-the-art analytical toolset for them to improve their products. Multilayer (ML) coating, substrate cleaning, and substrate suppliers are on site improving their products with a toolset that includes defect inspection, multilayer deposition, and substrate cleaning capabilities. X-ray diffraction (XRD) and EUV reflectance measurement capability as well as focused ion beam scanning electron microscopy/energy-dispersive X-ray (FIBSEM/EDX) and atomic force microscopy (AFM) for defect characterization are on site. The SEMATECH MBDC has just installed a Lasertec M7360, an advanced EUV mask blank inspection tool. The M7360 operates at a much shorter wavelength than the previous generation of confocal scanning inspection tools (266nm vs. 488nm for the M1350). The M7360 represents a significant improvement in our defect detection sensitivity. This paper will center on the capabilities of this new tool and show initial inspection results on EUV multilayer at sensitivities well below those that have been previously reported.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wonil Cho, Patrick A. Kearney, Eric M. Gullikson, Anwei Jia, Tomoya Tamura, Atsushi Tajima, Hal Kusunose, and Chan-Uk Jeon "Inspection with the Lasertec M7360 at the SEMATECH Mask Blank Development Center", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170D (13 March 2007); https://doi.org/10.1117/12.712990
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Cited by 9 scholarly publications and 1 patent.
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KEYWORDS
Inspection

Photomasks

Extreme ultraviolet lithography

Defect detection

Extreme ultraviolet

Reflectivity

Atomic force microscopy

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