Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks

Kenji Hiruma; Yuusuke Tanaka; Shinji Miyagaki; Jerry Cullins; Iwao Nishiyama

doi:10.1117/12.711909

15 March 2007 Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks

Kenji Hiruma, Yuusuke Tanaka, Shinji Miyagaki, Jerry Cullins, Iwao Nishiyama

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 651720 (2007) https://doi.org/10.1117/12.711909
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

To reduce the surface roughness of a substrate for mask blanks for extreme ultraviolet (EUV) lithography, the layers of a Mo-Si multilayer structure being deposited by magnetron sputtering were treated with an assisted ion beam. The effectiveness was analyzed by atomic force microscopy, X-ray reflection diffraction, and EUV reflectivity measurements, which revealed a large improvement in the interface and surface roughness, resulting in a multilayer with better EUV performance than one formed without such treatment.

Citation Download Citation

Kenji Hiruma, Yuusuke Tanaka, Shinji Miyagaki, Jerry Cullins, and Iwao Nishiyama "Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651720 (15 March 2007); https://doi.org/10.1117/12.711909

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