Stochastic simulation of material and process effects on the patterning of complex layouts

N. Tsikrikas; D. Drygiannakis; G. P. Patsis; G. Kokkoris; I. Raptis; E. Gogolides

doi:10.1117/12.708858

6 April 2007 Stochastic simulation of material and process effects on the patterning of complex layouts

N. Tsikrikas, D. Drygiannakis, G. P. Patsis, G. Kokkoris, I. Raptis, E. Gogolides

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 651836 (2007) https://doi.org/10.1117/12.708858
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

The whole process of stochastic lithography simulation combined with an electron-beam simulation module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and process parameters can no more be considered of second order importance in high-density designs. Line-width roughness quantification should accompany CD measurements since it could be a large fraction of the total CD budget. An example of the effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, stochastic simulations for the modeling of resist film, the post-exposure bake, resist dissolution, and a simple analytic model for resist etching. Particular examples of line-width roughness and critical dimension non-uniformity due to, material, and process effects on the gate of a standard CMOS inverter layout are presented.

Citation Download Citation

N. Tsikrikas, D. Drygiannakis, G. P. Patsis, G. Kokkoris, I. Raptis, and E. Gogolides "Stochastic simulation of material and process effects on the patterning of complex layouts", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651836 (6 April 2007); https://doi.org/10.1117/12.708858

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