Immersion defect reduction, part I: analysis of water leaks in an immersion scanner

Fu-Jye Liang; Hsing Chang; Lin-Hung Shiu; Chun-Kuang Chen; Li-Jui Chen; Tsai-Sheng Gau; Burn J. Lin

doi:10.1117/12.712531

27 March 2007 Immersion defect reduction, part I: analysis of water leaks in an immersion scanner

Fu-Jye Liang, Hsing Chang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, Burn J. Lin

Proceedings Volume 6520, Optical Microlithography XX; 65204U (2007) https://doi.org/10.1117/12.712531
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

This paper reports the water-leakage mechanism of the immersion hood in an immersion scanner. The proposed static analysis reveals the immersion hood design performance in defect distribution. A dynamic water-leakage model traces the leaked water and identifies its position on the wafer, during exposure. Comparing simulation to experimental results on bare-silicon and resist-coated wafers, the defect type, source of residuals, and critical settings on the immersion system were clearly identified.

Citation Download Citation

Fu-Jye Liang, Hsing Chang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin "Immersion defect reduction, part I: analysis of water leaks in an immersion scanner", Proc. SPIE 6520, Optical Microlithography XX, 65204U (27 March 2007); https://doi.org/10.1117/12.712531

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