Light sources for EUV lithography at the 22-nm node and beyond

Igor V. Fomenkov; Norbert R. Böwering; David C. Brandt; Daniel J. Brown; Alexander N. Bykanov; Alex I. Ershov; Bruno La Fontaine; Michael J. Lercel; David W. Myers

doi:10.1117/12.916531

23 March 2012 Light sources for EUV lithography at the 22-nm node and beyond

Igor V. Fomenkov, Norbert R. Böwering, David C. Brandt, Daniel J. Brown, Alexander N. Bykanov, Alex I. Ershov, Bruno La Fontaine, Michael J. Lercel, David W. Myers

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83222N (2012) https://doi.org/10.1117/12.916531
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Through a number of experimental studies carried out on various experimental test stands we are characterizing the scaling of EUV power and collector lifetime. The current performance of the first generation of EUV sources to support EUV lithography scanners is at 20 W power and 70% availability. CO₂ drive laser power of up to 17 kW has been reached, while average EUV power of nearly 50 W was demonstrated on an HVM I source with a laser pre-pulse at our facilities. The burst EUV power on this source was in excess of 90 W at 10% to 20% duty cycle and closer to 60 W at 80% duty cycle since the full set of automated controls has not yet been implemented on this source. Once the automation of the laser-droplet position controls is implemented on our pre-pulse system, the average source power is expected to reach power levels on the order of 100 W. Further scaling of source power through operation at repetition rates higher than 50 kHz was also shown to be possible. Through improved gas management, better coatings and parallel testing of collector samples, we have significantly extended the useful life of the source collector mirrors.

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Igor V. Fomenkov, Norbert R. Böwering, David C. Brandt, Daniel J. Brown, Alexander N. Bykanov, Alex I. Ershov, Bruno La Fontaine, Michael J. Lercel, and David W. Myers "Light sources for EUV lithography at the 22-nm node and beyond", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222N (23 March 2012); https://doi.org/10.1117/12.916531

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