Low CoO grazing incidence collectors for EUVL HVM

G. Bianucci; G. L. Cassol; N. M. Ceglio; G. Valsecchi; F. Zocchi

doi:10.1117/12.916157

23 March 2012 Low CoO grazing incidence collectors for EUVL HVM

G. Bianucci, G. L. Cassol, N. M. Ceglio, G. Valsecchi, F. Zocchi

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 832216 (2012) https://doi.org/10.1117/12.916157
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Media Lario Technologies (MLT) uses its proprietary replication by electroforming technology to manufacture grazing incidence collectors in support of the EUVL technology roadmap. With the experience of more than 20 alpha and preproduction collectors installed to date, and with the development results of the Advanced Cooling Architecture (ACA) for High Volume Manufacturing (HVM) collector generation, we present optical, lifetime, and thermo-optical performance of the grazing incidence collectors, meeting the requirements of HVM scanners for a throughput target of more than 100 wafers per hour. The ruthenium reflective layer of the grazing incidence collector is very forgiving to the hostile environment of the plasma sources, as proven by the installed base with 1-year lifetime expectancy. On the contrary, the multilayer-based collector is vulnerable to Sn deposition and ion bombardment, and the need to mitigate this issue has led to a steady increase of the complexity of the LPP source architecture. With the awareness that the source and collector module is the major risk against the timely adoption of EUVL in HVM, we propose a new paradigm that, by using the field-proven design simplicity and robustness of the grazing incidence collector in both LDP and LPP sources, effectively reduces the risk of both source architectures and improves their reliability.

Citation Download Citation

G. Bianucci, G. L. Cassol, N. M. Ceglio, G. Valsecchi, and F. Zocchi "Low CoO grazing incidence collectors for EUVL HVM", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832216 (23 March 2012); https://doi.org/10.1117/12.916157

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