Towards quantum dot laser diodes emitting at 1.5 microns

Simon Fafard; John P. McCaffrey; Yan Feng; C. Ni. Allen; Hugues Marchand; L. Isnard; Patrick Desjardins; S. Guillon; Remo A. Masut

doi:10.1117/12.328737

4 December 1998 Toward quantum dot laser diodes emitting at 1.5 μm

Simon Fafard, John P. McCaffrey, Yan Feng, C. Ni. Allen, Hugues Marchand, L. Isnard, Patrick Desjardins, S. Guillon, Remo A. Masut

Author Affiliations +

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328737
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low thresholds of 13 A/cm² at 77 K and 82 A/cm² at 15 degree(s)C. On InP substrates, InAs QDs have been grown by Metal-Organic Chemical Vapor Deposition (MOCVD) with InP claddings, and by MBE in InGaAlAs separate confinement heterostructures. For the InAs/InP by MOCVD, the QD photoluminescence (PL) peaks between 1.51 micrometers and 1.57 micrometers at 77 K and close to 1.6 micrometers at 300 K. Transmission Electron Microscope analysis correlated with the PL results reveal that the QD density depends on the growth interrupt time which follows the InAs deposition. For the InAs/InGaAlAs by MBE, the QD electroluminescence peaks at approximately 1.42 micrometers at 300 K.

Citation Download Citation

Simon Fafard, John P. McCaffrey, Yan Feng, C. Ni. Allen, Hugues Marchand, L. Isnard, Patrick Desjardins, S. Guillon, and Remo A. Masut "Toward quantum dot laser diodes emitting at 1.5 μm", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328737

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available