Conductive layer for charge dissipation during electron-beam exposures

Luisa D. Bozano; Ratnam Sooriyakumaran; Linda K. Sundberg; Martha I. Sanchez; Elizabeth M. Lofano; Charles T. Rettner; Takayuki Nagasawa; Satoshi Watanabe; Yoshio Kawai; Nagarajan Palavesam; Gustavo Gandara Montano

doi:10.1117/12.916756

20 March 2012 Conductive layer for charge dissipation during electron-beam exposures

Luisa D. Bozano, Ratnam Sooriyakumaran, Linda K. Sundberg, Martha I. Sanchez, Elizabeth M. Lofano, Charles T. Rettner, Takayuki Nagasawa, Satoshi Watanabe, Yoshio Kawai, Nagarajan Palavesam, Gustavo Gandara Montano

Author Affiliations +

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83250X (2012) https://doi.org/10.1117/12.916756
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Electron beam resists develop a surface potential during exposure, which can lead to image placement errors of up to several nanometers [1] and result in poor CD uniformity and image quality. To address this problem, we have synthesized a conductive polymer that can be coated onto a resist. Our conductive discharge layer (CDL) is water-soluble and is easily removed during subsequent processing steps. Having established that our material has a low enough resistance for full charge dissipation, we have carried out extensive tests to evaluate the impact of the layer on lithographic performance. We will report these findings, which include measurements of the effect of the CDL on the resolution, roughness, and speed of the resist.

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Luisa D. Bozano, Ratnam Sooriyakumaran, Linda K. Sundberg, Martha I. Sanchez, Elizabeth M. Lofano, Charles T. Rettner, Takayuki Nagasawa, Satoshi Watanabe, Yoshio Kawai, Nagarajan Palavesam, and Gustavo Gandara Montano "Conductive layer for charge dissipation during electron-beam exposures", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250X (20 March 2012); https://doi.org/10.1117/12.916756

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