Antireflection strategies for sub-0.18-um dual-damascene structure patterning in KrF 248-nm lithography

Shuo-Yen Chou; Chien-Ming Wang; Chin Chiu Hsia; Li-Jui Chen; Gue-Wuu Hwang; Shyh-Dar Lee; Jen-Chung Lou

doi:10.1117/12.354410

26 July 1999 Antireflection strategies for sub-0.18-μm dual-damascene structure patterning in KrF 248-nm lithography

Shuo-Yen Chou, Chien-Ming Wang, Chin Chiu Hsia, Li-Jui Chen, Gue-Wuu Hwang, Shyh-Dar Lee, Jen-Chung Lou

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354410
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Finding high performance and low cost anti-reflection strategies is a common goal for all photolithographers. This task is getting tough for dual damascene process than the metal-etch process because the oxide thickness variation enhances the thin film interference effect. In this paper, different ARC strategies using organic and inorganic material were examined to compare their CD control performance in sub-0.81micrometers dual damascene structure for KrF 248nm lithography. The organic bottom ARC (BARC) achieves reflectivity control through modulation its thickness. The first and second minimal points in BARC swing curve were chosen as the film thickness to be evaluated. The inorganic ARC, which referred to dielectric ARC (DARC) using PECVD silicon oxynitride in this article, was investigated with single layer and double layers structures. The double- layer DARC structure consists of two layers with different extinction coefficient K values. The optimal refractive index and thickness of each ARC structure were calculated from some available photolithography simulators. A PECVD process for DARC growth that provides easily tunable range of refractive index and thickness was established to meet the DUV process requirement from simulation. The performances of each ARC structure were evaluated on patterning 0.18 micrometers trench and 0.20 micrometers via in back-end- of-line dual damascene process. It showed that the double- layer DARC provided the most effective CD control ability among these ARC structures. The double-layer DARC should be one of the most potential candidates for sub-0.18 micrometers dual damascene process.

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Shuo-Yen Chou, Chien-Ming Wang, Chin Chiu Hsia, Li-Jui Chen, Gue-Wuu Hwang, Shyh-Dar Lee, and Jen-Chung Lou "Antireflection strategies for sub-0.18-μm dual-damascene structure patterning in KrF 248-nm lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354410

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KEYWORDS

Reflectivity

Critical dimension metrology

Oxides

Semiconducting wafers

Refractive index

Optical lithography

Lithography

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