Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-um band

Patrick J.P. Tang; Mark J. Pullin; S. J. Chung; Christopher C. Phillips; R. A. Stradling; A. G. Norman; Y. B. Li; L. Hart

doi:10.1117/12.206930

24 April 1995 Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-μm band

Patrick J.P. Tang, Mark J. Pullin, S. J. Chung, Christopher C. Phillips, R. A. Stradling, A. G. Norman, Y. B. Li, L. Hart

Author Affiliations +

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206930
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

4-12 micrometers Photoluminescence (PL) and electroluminescence (EL) at room temperature are observed from In(As,Sb) undoped strained layer superlattices (SLS's) and SLS diodes. The SLS's are grown by molecular beam epitaxy on GaAs substrates and are composed of arsenic rich alloys clad between InAs layers. The long wavelength emission is accounted for by an extreme type II valence band offset equals 830x meV (where x in the Sb composition). Internal PL efficiencies greater than 10% for light emission up to 9 micrometers are observed at 12 K in spite of presumed large dislocation densities due to the epilayer/substrate mismatch (approximately 7%). This is consistent with the thesis that defects in As rich alloys are, as in InAs, resonant with the conduction band instead of forming non-radiative recombination centers in the band gap. The high radiative efficiencies even at room temperature are attributed to the suppression of Auger recombination in the type II superlattice. We report the first Electroluminescence spectra covering the 4 - 12 micrometers wavelength range from a series of uncooled SLS LED's. Clear atmospheric absorption features in the EL spectra demonstrate their usefulness for gas sensing applications. The growth of these devices on GaAs substrates offers the possibility of easy integration with existing III-V fabrication technologies.

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Patrick J.P. Tang, Mark J. Pullin, S. J. Chung, Christopher C. Phillips, R. A. Stradling, A. G. Norman, Y. B. Li, and L. Hart "Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-μm band", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206930

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