Modular high-performance 2-um CCD-BiCMOS process technology for application-specific image sensors and image sensor systems on a chip

R. Michael Guidash; P. P. K. Lee; J. M. Andrus; Antonio S. Ciccarelli; H. J. Erhardt; J. R. Fischer; Eric J. Meisenzahl; Robert H. Philbrick; Timothy J. Kenney

doi:10.1117/12.206521

10 April 1995 Modular high-performance 2-μm CCD-BiCMOS process technology for application-specific image sensors and image sensor systems on a chip

R. Michael Guidash, P. P. K. Lee, J. M. Andrus, Antonio S. Ciccarelli, H. J. Erhardt, J. R. Fischer, Eric J. Meisenzahl, Robert H. Philbrick, Timothy J. Kenney

Author Affiliations +

Proceedings Volume 2415, Charge-Coupled Devices and Solid State Optical Sensors V; (1995) https://doi.org/10.1117/12.206521
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1995, San Jose, CA, United States

Abstract

A 2 micrometers BiCMOS process module has been developed for incorporation into existing high performance 2-phase CCD processes, to enable integration of digital and analog circuits on- chip with the CCD image sensor. The modular process architecture allows the integration of CMOS, NPN bipolar or BiCMOS circuits without affecting the baseline CCD characteristics. A design of experiments approach was employed using process and device simulation tools and selected physical experiments, to optimize CMOS and NPN device performance and process latitude. Both enhancement and depletion mode Poly-1 and Poly-2 CMOS devices were realized and demonstrated good long channel behavior down to 1.6 micrometers drawn. A 12 V, 2.5 GHz, low collector resistance NPN was also produced. Experimental process splits were used to demonstrate and verify that the CMOS and NPN process module incorporation did not affect the CCD device characteristics or yield. CMOS circuit performance was found to be comparable to that of a standard 2 micrometers CMOS process. Finally, a trilinear sensor with on-chip timing generation and correlated double sample was designed and fabricated. To our knowledge this is the first demonstration of high performance CCD, 2 micrometers CMOS, and an isolated vertical NPN, integrated on the same chip.

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R. Michael Guidash, P. P. K. Lee, J. M. Andrus, Antonio S. Ciccarelli, H. J. Erhardt, J. R. Fischer, Eric J. Meisenzahl, Robert H. Philbrick, and Timothy J. Kenney "Modular high-performance 2-μm CCD-BiCMOS process technology for application-specific image sensors and image sensor systems on a chip", Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); https://doi.org/10.1117/12.206521

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KEYWORDS

Charge-coupled devices

Image processing

CCD image sensors

Sensors

Image sensors

Cadmium sulfide

Clocks

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