Paper
30 July 2002 Resolution enhancement of 157-nm lithography by liquid immersion
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Abstract
We present the results of a preliminary feasibility study of liquid immersion lithography at 157 nm. A key enabler has been the identification of a class of commercially available liquids, perfluoropolyethers, with low 157 nm absorbance α157~10 cm-1 base10. With 157 nm index of refraction around 1.36, these liquids could enable lithography at NA~1.25 and thus resolution of 50 nm for k1=0.4. We have also performed preliminary studies on the optical, chemical, and physical suitability of these liquids for use in high throughput lithography. We also note that at longer wavelengths, there is a wider selection of transparent immersion liquids. At 193 nm, the most transparent liquid measured, deionized water, has α193 = 0.036 cm-1 base 10. Water immersion lithography at 193 nm would enable resolution of 60 nm with k1=0.4.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Switkes and Mordechai Rothschild "Resolution enhancement of 157-nm lithography by liquid immersion", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474568
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Cited by 19 scholarly publications and 400 patents.
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KEYWORDS
Liquids

Lithography

Immersion lithography

Semiconducting wafers

Absorbance

Resolution enhancement technologies

Optical design

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