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Proceedings Article

Vertical-Cavity Surface-Emitting Laser Diodes for Telecommunication Wavelengths

[+] Author Affiliations
Markus-Christian Amann, Markus Ortsiefer, Robert Shau, Juergen Rosskopf

Technische Univ. Muenchen (Germany)

Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, 123 (December 1, 2002); doi:10.1117/12.460475
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From Conference Volume 4871

  • Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems
  • Richard P. Mirin; Carmen S. Menoni
  • Boston, MA | July 29, 2002

abstract

A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.

© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Markus-Christian Amann ; Markus Ortsiefer ; Robert Shau and Juergen Rosskopf
"Vertical-Cavity Surface-Emitting Laser Diodes for Telecommunication Wavelengths", Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, 123 (December 1, 2002); doi:10.1117/12.460475; http://dx.doi.org/10.1117/12.460475


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