High-power and high-brightness laser diode structures at 980 nm using an Al-free active region

Sophie-Charlotte Auzanneau; Michel M. Krakowski; Francois Berlie; Michel Calligaro; Yannick Robert; Olivier Parillaud; Michel Lecomte; B. Boulant; Thierry Fillardet

doi:10.1117/12.475765

3 July 2003 High-power and high-brightness laser diode structures using Al-free active region

Sophie-Charlotte Auzanneau, Michel M. Krakowski, Francois Berlie, Michel Calligaro, Yannick Robert, Olivier Parillaud, Michel Lecomte, B. Boulant, Thierry Fillardet

Author Affiliations +

Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003) https://doi.org/10.1117/12.475765
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

High bit-rate, WDM, networks are reliant on Er or Er/Yb doped fiber amplifiers. Reliable, high power laser diodes at 980nm and 1480nm are key devices for pumping these amplifiers. We have developed several 980 nm laser diode structures at 980 nm, using an Aluminum free active region and standard AR/HR coatings on the facets. Our laser show low optical losses, low threshold current density and a high external differential efficiency. We demonstrate a mini-bar of small angle index guided tapered laser diodes (emissive width of 3 mm) with an optical output power of 20W at 33A under CW operation (25°C). The far field of the slow axis has a Gaussian single lobed shape, with a FWHM of 3.5° at maximum power, which is two times less than obtained with multimode broad area lasers. With such a device, we expect to couple 10W into a 100μm diameter fiber. We also demonstrate a large aperature gain-guided tapered laser with an output power of 2.4W and a calculated M²_1/c2 = 3, the M²_1/c2 factor being calculated with the method based on measurements of the fields profiles widths at 1/c².

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Sophie-Charlotte Auzanneau, Michel M. Krakowski, Francois Berlie, Michel Calligaro, Yannick Robert, Olivier Parillaud, Michel Lecomte, B. Boulant, and Thierry Fillardet "High-power and high-brightness laser diode structures using Al-free active region", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); https://doi.org/10.1117/12.475765

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