Erbium-activated silica-tin oxide glass ceramics for photonic integrated circuits: fabrication, characterisation, and assessment

T. T. Van Tran; Christophe Kinowski; Odile Cristini; Bruno Capoen; Alessandro Chiasera; Davor Ristic; Maurizio Ferrari; Sylvia Turrell

doi:10.1117/12.922595

11 May 2012 Erbium-activated silica-tin oxide glass ceramics for photonic integrated circuits: fabrication, characterisation, and assessment

T. T. Van Tran, Christophe Kinowski, Odile Cristini, Bruno Capoen, Alessandro Chiasera, Davor Ristic, Maurizio Ferrari, Sylvia Turrell

Author Affiliations +

Proceedings Volume 8431, Silicon Photonics and Photonic Integrated Circuits III; 84311F (2012) https://doi.org/10.1117/12.922595
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

Er-doped (100-x) SiO₂ - x SnO₂ glass-ceramic monoliths were prepared using a sol-gel processing. The thermally induced growth of SnO₂ nanocrystals was followed by Raman spectroscopic measurements. Using x-ray crystallography, the average crystal size was determined to be about 5nm for a heat-treatment at 1000°C. Analysis of the photoluminescence data shows that the amount of Er³⁺ ions incorporated in the SnO₂ nanocrystals can be controlled by the tin dioxide concentration. In addition, spectroscopic evidence is provided of a transfer of energy from SnO₂ nanocrystals to erbium ions within the silica matrix, thus confirming the crystalline environment of the rare-earth ions.

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T. T. Van Tran, Christophe Kinowski, Odile Cristini, Bruno Capoen, Alessandro Chiasera, Davor Ristic, Maurizio Ferrari, and Sylvia Turrell "Erbium-activated silica-tin oxide glass ceramics for photonic integrated circuits: fabrication, characterisation, and assessment", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311F (11 May 2012); https://doi.org/10.1117/12.922595

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