The convergence of photonics and microelectronics within a single chip is still lacking of a monolithical on-chip optical
amplifier. Rare-earth doped slot waveguides show a large potential as on-chip source. Slot waveguides with silicon
nanocrystals embedded in a dielectric host matrix can increase the light confinement in the active layer and allow
electrical injection. In this work, horizontal slot waveguides formed by two thick silicon layers separated by a thin
erbium doped silicon rich silicon oxide layer are studied as on-chip optical amplifiers. The waveguides are grown in a
CMOS line with the active material grown by low-pressure chemical vapor deposition. Optical tests are performed and
light propagation in the slot waveguides is observed. Using the cut-back technique, spectra propagation losses are
evaluated. Room temperature electroluminescence is observed at 1.54 μm. Transmitted optical signal resonant with Er
absorption is studied as a function of the injected current for different probing laser wavelengths.
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Andrea Tengattini ; Davide Gandolfi ; Alessandro Marconi ; Oleksiy Anopchenko ; Nikola Prtljaga, et al.
Opto-electrical characterization of erbium-doped slot waveguides
", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843118 (May 4, 2012); doi:10.1117/12.922695; http://dx.doi.org/10.1117/12.922695