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Proceedings Article

Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE

[+] Author Affiliations
Amir Karim, Laiq Hussain, Qin Wang, Bertrand Noharet, Jan Anderson

Acreo AB (Sweden)

Oscar Gustafsson, Matthias Hammar

Royal Institute of Technology (Sweden)

Jindong Song

Korea Institute of Science and Technology (Korea, Republic of)

Proc. SPIE 8439, Optical Sensing and Detection II, 84391J (April 23, 2012); doi:10.1117/12.922396
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From Conference Volume 8439

  • Optical Sensing and Detection II
  • Francis Berghmans; Anna G. Mignani; Piet De Moor
  • Brussels, Belgium | April 16, 2012

abstract

We report on the optical and structural characterization of InSb QDs in InAs matrix, grown on InAs (100) substrates, for infrared photodetection. InSb has 7% lattice mismatch with InAs forming strained QDs, which are promising for longwave IR applications, due to their type-II band alignment. This report contains material development results of InSb QDs for increasing their emission wavelength towards long-wave IR region. Samples were grown by two techniques of MBE and MOVPE, with different InSb coverage on InAs (100) substrates. Structures grown by MBE reveal QD related photoluminescence at 4 μm. AFM investigations of the MBE grown structures showed uncapped dots of ~ 35 nm in size and ~ 3 nm in height, with a density of about 2 x 1010 cm-2. Cross-section TEM investigations of buried InSb layers grown by MBE showed coherently strained QDs for nominal InSb coverage in the range of 1.6 - 2 monolayers (MLs). Layers with InSb coverage more than 2MLs contain relaxed QDs with structural defects due to large amount of strain between InSb and InAs. Samples with such large dots did not show any InSb related luminescence. The MOVPE grown InSb samples exhibit a strong QD related emission between 3.8 to 7.5 μm, depending on the amount of InSb coverage and other growth parameters. We report the longest wavelength observed so far in this material system.

© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Amir Karim ; Oscar Gustafsson ; Laiq Hussain ; Qin Wang ; Bertrand Noharet, et al.
"Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE", Proc. SPIE 8439, Optical Sensing and Detection II, 84391J (April 23, 2012); doi:10.1117/12.922396; http://dx.doi.org/10.1117/12.922396


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