Multi component EUV multilayer mirrors

Stefan Braun; Thomas Foltyn; Ludwig van Loyen; Matthew Moss; Andreas Leson

doi:10.1117/12.484984

16 June 2003 Multi component EUV multilayer mirrors

Stefan Braun, Thomas Foltyn, Ludwig van Loyen, Matthew Moss, Andreas Leson

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484984
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

It is well known that molybdenum and silicon is the combination with the highest EUV reflectivity of two-component multilayers in the wavelength range lambda=12.5-20nm. Using the magnetron sputter deposition method multilayers with reflectivities of typically 69% can be prepared. A further increase to R=70% was demonstrated by the introduction of tiny barrier layers (C and/or B4C) between the Mo and Si layers, which reduce the interdiffusion of both chemical elements. However, still higher reflectivities are desirable for the use of the multilayers as reflectors for EUV lithography. From model considerations we have concluded that the replacement of the Mo absorber layer by a multi-component layer consisting of two or three layers could result in an EUV reflectivity increase of up to 0.5% compared to the pure Mo/Si system assuming sharp interfaces without any roughness. Particularly Ag and Ru are promising candidates as additional elements within the absorber. Therefore we have systematically changed the thicknesses of the individual layers under the boundary condition of a fixed period thickness of dp=(6.90±0.05)nm. Microstructure and optical parameters of the multilayers have been investigated by HRTEM, X-ray diffractometry and Cu-Ka reflectometry. The most promising multilayers have also been characterized by EUV reflectometry.

Citation Download Citation

Stefan Braun, Thomas Foltyn, Ludwig van Loyen, Matthew Moss, and Andreas Leson "Multi component EUV multilayer mirrors", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484984

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