Stress release of PECVD oxide by RTA

Remy Charavel; Benoit Olbrechts; Jean-Pierre Raskin

doi:10.1117/12.498098

24 April 2003 Stress release of PECVD oxide by RTA

Remy Charavel, Benoit Olbrechts, Jean-Pierre Raskin

Proceedings Volume 5116, Smart Sensors, Actuators, and MEMS; (2003) https://doi.org/10.1117/12.498098
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

The effects of various deposition and annealing conditions of Plasma Enhanced Chemical Vapour Deposited (PECVD) oxide films on residual stress, optical index, BHF etch rate, surface roughness for thick PECVD oxide films are investigated. Rapid Thermal Annealing (RTA) and annealing in regular furnaces are both considered and compared. AFM measurements were required to measure the oxide surface roughness. Thick PECVD oxide films of 1.5 μm were deposited on 380 μm bulk silicon wafer. Starting from a conventional recipe the power, the [N₂O/SiH₄] ratio and the total gas flow were successively varied. An increase of the total gas flow or/and a decrease of power lead to an increase of the BHF etch rate and surface roughness but on the other hand decrease the residual stress. A high ratio N₂O/SiH₄ yields to oxide with low BHF etch rate but characterized by higher residual stress. RTA reduces the stress and the BHF etch rate drastically and it is more efficient than conventional annealing in standard furnace. Actually, RTA reduces stress in a very short period of time (few seconds) compared to standard annealing, and then it does not contribute to doping diffusion of the already implanted regions of the wafer. From a compressive stress of about 80 MPa, RTA of 15 s leads to a residual stress of only 30 MPa and bring the BHF etch rate to acceptable values in the range of 2000 Α/min for high N₂O/SiH₄ ratio oxide. One main application of this RTA stress release of oxide is to provide processed wafers with a bow compatible(less than 10 μm) with Chemical Mechanical Polishing (CMP) or wafer bonding.

Citation Download Citation

Remy Charavel, Benoit Olbrechts, and Jean-Pierre Raskin "Stress release of PECVD oxide by RTA", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); https://doi.org/10.1117/12.498098

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available