Electrical and optical properties of thick Mg2Si films on Si(111)

Nickolai G. Galkin; Svetlana V. Vavanova; Andrei M. Maslov; Konstantin N. Galkin

doi:10.1117/12.502403

17 June 2003 Electrical and optical properties of thick Mg₂Si films on Si(111)

Nickolai G. Galkin, Svetlana V. Vavanova, Andrei M. Maslov, Konstantin N. Galkin

Proceedings Volume 5129, Fundamental Problems of Optoelectronics and Microelectronics; (2003) https://doi.org/10.1117/12.502403
Event: Fundamental Problems of Optoelectronics and Microelectronics, 2002, Vladivostok, Russian Federation

Abstract

Solid phase multilayer growth technique of magnesium silicide (Mg₂Si) films with preliminary formation of templates, allowing to growth the thick (60-100 nm) Mg₂Si film, has offered. Optical function data have shown, that thick (60-80 nm) Mg₂Si films are the narrow band semiconductor with optical band gap of E_gopt = 0.75 eV and two absorption regions with the small state density at 0.75-2.1 eV and large state density at 2.3-6.2 eV on Mg₂Si cell, but in the second range about 3.0 electrons on Mg₂Si cell participate in formation of electronic structure. The integrated spectra of the dielectric function of Mg₂Si have been decomposed into the contributions from four non-interacting harmonic oscillators and the parameters of these oscillators were evaluated. It was established that the third harmonic oscillator (E_p=2.50 eV) with large oscillator strength introduces the main contribution into the dielectric function. The researches of electrical properties of thick magnesium silicide films on silicon also have shown, that they are narrow band semiconductors of p-type conductivity with energy band gap (E_gel=0.77 eV), in which the high mobility holes with high rate of their scattering was observed at temperature increase (μ~T-4.0). On temperature dependencies of carrier concentration two activation regions, connected to a generation of carriers through fundamental transition (0.77 eV) and second interband transition with energy 2.78 eV, have been found.

Citation Download Citation

Nickolai G. Galkin, Svetlana V. Vavanova, Andrei M. Maslov, and Konstantin N. Galkin "Electrical and optical properties of thick Mg₂Si films on Si(111)", Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); https://doi.org/10.1117/12.502403

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