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Proceedings Article

InAs and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors

[+] Author Affiliations
M. A. Remennyy, B. A. Matveev, N. V. Zotova, S. A. Karandashev, N. M. Stus, N. D. Ilinskaya

Ioffe Physico-Technical Institute (Russia)

Proc. SPIE 6585, Optical Sensing Technology and Applications, 658504 (May 01, 2007); doi:10.1117/12.722847
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From Conference Volume 6585

  • Optical Sensing Technology and Applications
  • Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler
  • Prague, Czech Republic | April 16, 2007

abstract

InAs and InAs(Sb)(P) based heterostructures with InAsSbP claddings grown onto heavily doped or undoped n-InAs substrates have been processed into 230÷430 μm wide mesa flip-chip devices operating in the 3÷5 μm spectral range. We present temperature dependence of I-V, RoA, SI and D* as well as the dependence on a photon energy in uncoated backside illuminated and equipped with an immersion lens photodiodes respectively. Room temperature D*λ as high as (1.75x1011÷3x108) cmHz1/2W-1 was achieved in photodiodes with Si lens having effective diameter of 3.3 mm and operating in the 3÷5 μm range correspondingly.

© (2007) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

M. A. Remennyy ; B. A. Matveev ; N. V. Zotova ; S. A. Karandashev ; N. M. Stus, et al.
"InAs and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors", Proc. SPIE 6585, Optical Sensing Technology and Applications, 658504 (May 01, 2007); doi:10.1117/12.722847; http://dx.doi.org/10.1117/12.722847


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