Al<sub>x</sub>Ga<sub>1-x</sub>N focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range

J. John; P. Malinowski; P. Aparicio; G. Hellings; A. Lorenz; M. Germain; F. Semond; J.-Y. Duboz; A. BenMoussa; J.-F. Hochedez; U. Kroth; M. Richter

doi:10.1117/12.723023

16 May 2007 Al_xGa_1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range

J. John, P. Malinowski, P. Aparicio, G. Hellings, A. Lorenz, M. Germain, F. Semond, J.-Y. Duboz, A. BenMoussa, J.-F. Hochedez, U. Kroth, M. Richter

Author Affiliations +

Proceedings Volume 6585, Optical Sensing Technology and Applications; 658505 (2007) https://doi.org/10.1117/12.723023
Event: International Congress on Optics and Optoelectronics, 2007, Prague, Czech Republic

Abstract

Metal-Semiconductor-Metal photodiodes were fabricated on epitaxially grown Al_xGa_1-xN on Si(111). The Aluminium content of the layers grown by means of molecular beam epitaxy (MBE) was 50, 80 and 100%, respectively. The processing was performed by standard microelectronic fabrication techniques like photolithography, wet and dry etching (RIE) and physical and chemical vapor deposition (PVD,CVD). The devices were characterized under illumination in a wavelength range from 400 to 185nm to determine the cut-off wavelength defined by the band-gap energy. Typical figures of merit like spectral responsivity R quantum efficiency &eegr; and specific detectivity D* have been extracted from the measurement data.

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J. John, P. Malinowski, P. Aparicio, G. Hellings, A. Lorenz, M. Germain, F. Semond, J.-Y. Duboz, A. BenMoussa, J.-F. Hochedez, U. Kroth, and M. Richter "Al_xGa_1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range", Proc. SPIE 6585, Optical Sensing Technology and Applications, 658505 (16 May 2007); https://doi.org/10.1117/12.723023

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