&#956;-Device fabrication and packaging below 300°C utilizing plasma-assisted wafer-to-wafer bonding

Herwig Kirchberger; Rainer Pelzer; Sharon Farrens

doi:10.1117/12.638577

28 December 2005 μ-Device fabrication and packaging below 300°C utilizing plasma-assisted wafer-to-wafer bonding

Herwig Kirchberger, Rainer Pelzer, Sharon Farrens

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 603705 (2005) https://doi.org/10.1117/12.638577
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

Wafer-to-wafer bonding techniques, such as anodic bonding or high temperature silicon direct fusion bonding, have been in development since the late 1960's and became key technologies for MEMS manufacturing. Plasma assisted wafer bonding is an emerging method offering several advantages over traditional bonding techniques. This technology was first discovered and patented in the early 1990's and has been used in SOI production for the past five years. Now plasma activation benefits are being used to enable 3D integration and advanced MEMS device fabrication and packaging. The main advantage of plasma assisted bonding is that high strength direct bonds between substrates, like Si, glass or polymers, can be achieved already below 300°C.

Citation Download Citation

Herwig Kirchberger, Rainer Pelzer, and Sharon Farrens "μ-Device fabrication and packaging below 300°C utilizing plasma-assisted wafer-to-wafer bonding", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603705 (28 December 2005); https://doi.org/10.1117/12.638577

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KEYWORDS

Plasma

Packaging

Silicon

Polymers

Microelectromechanical systems

Wafer bonding

Semiconducting wafers

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