Enhanced reflectivity and stability of Sc/Si multilayers

Sergiy A. Yulin; Franz Schaefers; Torsten Feigl; Norbert Kaiser

doi:10.1117/12.505582

13 January 2004 Enhanced reflectivity and stability of Sc/Si multilayers

Sergiy A. Yulin, Franz Schaefers, Torsten Feigl, Norbert Kaiser

Proceedings Volume 5193, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications; (2004) https://doi.org/10.1117/12.505582
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Sc/Si multilayers were designed for normal incidence reflectivity in the wavelength range from 35 to 50 nm and were deposited by dc-magnetron sputtering. X-ray scattering of CuKα radiation, transmission electron microscopy, atomic force microscopy and chemical analysis were used for the characterization of the multilayer structures. The normal incidence reflectivity was measured as a function of the wavelength, for different layer thickness ratios, number of layers and some important sputter parameters. Maximum reflectivities of 21% @ 38 nm and 54 % @ 46 nm for Sc/Si multilayer mirrors were achieved. Reflectivity up to 56 % @ 44.7 nm for a Sc/Si multilayers having enhanced interface structure due to Cr diffusion barriers will be under discussion. The increase in reflectivity is consistent with multilayers having sharper and smoother interfaces. The evolutions of optical properties in the temperature range from 50°C to 250°C for classical Sc/Si and interface engineered Sc/Cr/Si/Cr multilayers will be compared.

Citation Download Citation

Sergiy A. Yulin, Franz Schaefers, Torsten Feigl, and Norbert Kaiser "Enhanced reflectivity and stability of Sc/Si multilayers", Proc. SPIE 5193, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications, (13 January 2004); https://doi.org/10.1117/12.505582

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