Paper
26 January 2006 A QVGA-size CMOS time-of-flight range image sensor with background light charge draining structure
Takeo Ushinaga, Izhal Abdul Halin, Tomonari Sawada, Shoji Kawahito, Mitsuru Homma, Yasunari Maeda
Author Affiliations +
Proceedings Volume 6056, Three-Dimensional Image Capture and Applications VII; 605604 (2006) https://doi.org/10.1117/12.642022
Event: Electronic Imaging 2006, 2006, San Jose, California, United States
Abstract
3-D imaging systems can be used in a variety of applications such as in automobile, medicine, robot vision systems, security and so on. Recently many kinds of range finding methods have been proposed for 3-D imaging systems. This paper presents a new type of CMOS range image sensor based on the Time-of-Flight (TOF)principle with a spatial resolution of 336 × 252 (QVGA) and pixels of 15 × 15 μm2 size. A pixel structure of the sensor consists of single layer polysilicon gates on thick field oxide and has a function of background light induced charge reduction. The chip was fabricated in a 0.35 μm standard CMOS process with two poly and three metal layers. The presented sensor achieves a minimum range resolution of 2.8cm at framerate of 30fps and the resolution is improved to 4.2mm for 10 frames averaging, which corresponds to 3fps.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeo Ushinaga, Izhal Abdul Halin, Tomonari Sawada, Shoji Kawahito, Mitsuru Homma, and Yasunari Maeda "A QVGA-size CMOS time-of-flight range image sensor with background light charge draining structure", Proc. SPIE 6056, Three-Dimensional Image Capture and Applications VII, 605604 (26 January 2006); https://doi.org/10.1117/12.642022
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CITATIONS
Cited by 10 scholarly publications and 10 patents.
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KEYWORDS
Sensors

Electrons

3D image processing

Imaging systems

CMOS sensors

Light emitting diodes

Spatial resolution

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