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Proceedings Article

Terahertz emission from surface optical rectification in n-InAs

[+] Author Affiliations
M. Reid, R. Fedosejevs

Univ. of Alberta (Canada)

Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, 659 (December 20, 2004); doi:10.1117/12.567332
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From Conference Volume 5577

  • Photonics North 2004: Optical Components and Devices
  • John C. Armitage; Simon Fafard; Roger A. Lessard; George A. Lampropoulos
  • Ottawa, Ontario, Canada | September 27, 2004

abstract

Terahertz emission from n-type (100), (110) and (111) InAs crystals have been measured as a function of the sample orientation. Emission was excited using 120 fs Ti:Sapphire laser pulses at an incident angle of 45° with fluences of approximately 1-2mJ /cm 2. The data is shown to match the behavior expected for optical rectification at the surface, with small contributions from bulk optical rectification and photo-carrier diffusion. Thus, at fluences employed in the present study, it appears that the dominant mechanism for generating THz radiation is optical rectification at the surface.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

M. Reid and R. Fedosejevs
"Terahertz emission from surface optical rectification in n-InAs", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, 659 (December 20, 2004); doi:10.1117/12.567332; http://dx.doi.org/10.1117/12.567332


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