Terahertz emission from surface optical rectification in n-InAs

M. Reid; R. Fedosejevs

doi:10.1117/12.567332

20 December 2004 Terahertz emission from surface optical rectification in n-InAs

M. Reid, R. Fedosejevs

Proceedings Volume 5577, Photonics North 2004: Optical Components and Devices; (2004) https://doi.org/10.1117/12.567332
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

Terahertz emission from n-type (100), (110) and (111) InAs crystals have been measured as a function of the sample orientation. Emission was excited using 120 fs Ti:Sapphire laser pulses at an incident angle of 45° with fluences of approximately 1-2mJ/cm². The data is shown to match the behavior expected for optical rectification at the surface, with small contributions from bulk optical rectification and photo-carrier diffusion. Thus, at fluences employed in the present study, it appears that the dominant mechanism for generating THz radiation is optical rectification at the surface.

Citation Download Citation

M. Reid and R. Fedosejevs "Terahertz emission from surface optical rectification in n-InAs", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567332

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