Paper
21 October 2004 A novel simulation strategy for ultrafast InP/InGaAsP optoelectronic modulator analysis
Francesco M. De Paola, Vincenzo D'Alessandro, Andrea Irace, Jan Hendrik den Besten, Meint K. Smit
Author Affiliations +
Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.583068
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania
Abstract
In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based opto-electronic modulator. The device is composed by an InP-InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. We present numerical results indicating that with a 2 mm-long device a reverse bias of 11 V is needed for a 180° phase shift.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francesco M. De Paola, Vincenzo D'Alessandro, Andrea Irace, Jan Hendrik den Besten, and Meint K. Smit "A novel simulation strategy for ultrafast InP/InGaAsP optoelectronic modulator analysis", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); https://doi.org/10.1117/12.583068
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Cited by 3 scholarly publications.
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KEYWORDS
Refractive index

Modulators

Optoelectronics

Diodes

Waveguides

Finite element methods

Phase shifts

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