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Proceedings Article

Long-wavelength VCSELs on InP grown by MOCVD

[+] Author Affiliations
Nobuhiko Nishiyama, Catherine G. Caneau, Chung-En Zah

Corning Inc. (USA)

Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, 10 (August 19, 2003); doi:10.1117/12.512437
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From Conference Volume 5246

  • Active and Passive Optical Components for WDM Communications III
  • Achyut K. Dutta; Abdul Ahad S. Awwal; Niloy K. Dutta; Kazuo Fujiura
  • Orlando, FL | September 07, 2003

abstract

High efficiency continuous wave operation of 1.53 μm vertical-cavity surface-emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 58% and a single-mode power of 1.38 mW with a side mode suppression ratio (SMSR) of 45 dB. Lasing wavelength is 1537 nm. Lasing operation up to 90° C has been achieved with 0.16 mW power at 85° C. A symmetric and narrow far field angle of less than 12° was observed. An error free transmission at 2.488 Gbps with a -26 dBm minimum average receiver power was demonstrated.

© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Nobuhiko Nishiyama ; Catherine G. Caneau and Chung-En Zah
"Long-wavelength VCSELs on InP grown by MOCVD", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, 10 (August 19, 2003); doi:10.1117/12.512437; http://dx.doi.org/10.1117/12.512437


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