Long-wavelength VCSELs on InP grown by MOCVD

Nobuhiko Nishiyama; Catherine G. Caneau; Chung-En Zah

doi:10.1117/12.512437

14 August 2003 Long-wavelength VCSELs on InP grown by MOCVD

Nobuhiko Nishiyama, Catherine G. Caneau, Chung-En Zah

Proceedings Volume 5246, Active and Passive Optical Components for WDM Communications III; (2003) https://doi.org/10.1117/12.512437
Event: ITCom 2003, 2003, Orlando, Florida, United States

Abstract

High efficiency continuous wave operation of 1.53 μm vertical-cavity surface-emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 58% and a single-mode power of 1.38 mW with a side mode suppression ratio (SMSR) of 45 dB. Lasing wavelength is 1537 nm. Lasing operation up to 90° C has been achieved with 0.16 mW power at 85° C. A symmetric and narrow far field angle of less than 12° was observed. An error free transmission at 2.488 Gbps with a -26 dBm minimum average receiver power was demonstrated.

Citation Download Citation

Nobuhiko Nishiyama, Catherine G. Caneau, and Chung-En Zah "Long-wavelength VCSELs on InP grown by MOCVD", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); https://doi.org/10.1117/12.512437

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