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Proceedings Article

Optical parametric oscillator based on microstructured GaAs

[+] Author Affiliations
Konstantin L. Vodopyanov, Ofer Levi, Paulina S. Kuo, Thierry J. Pinguet, James S. Harris, Martin M. Fejer

Stanford Univ. (USA)

B. Gerard, L. Becouarn, Eric Lallier

Thales Research and Technology (France)

Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, 63 (December 23, 2004); doi:10.1117/12.578449
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From Conference Volume 5620

  • Solid State Laser Technologies and Femtosecond Phenomena
  • Jonathan A. C. Terry; W. Andrew Clarkson
  • London, United Kingdom | October 25, 2004

abstract

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 μm. By tuning either the near-IR pump wavelength between 1.75 and 2 μm, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 μm, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 μJ for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Konstantin L. Vodopyanov ; Ofer Levi ; Paulina S. Kuo ; Thierry J. Pinguet ; James S. Harris, et al.
"Optical parametric oscillator based on microstructured GaAs", Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, 63 (December 23, 2004); doi:10.1117/12.578449; http://dx.doi.org/10.1117/12.578449


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