Diode UV detectors using oxide semiconductor thin films deposited by magnetron sputtering

Tadatsugu Minami; Hideki Tanaka; Takahiro Shimakawa; Toshihiro Miyata

doi:10.1117/12.521590

30 March 2004 Diode UV detectors using oxide semiconductor thin films deposited by magnetron sputtering

Tadatsugu Minami, Hideki Tanaka, Takahiro Shimakawa, Toshihiro Miyata

Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.521590
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

This paper describes the fabrication of pn heterojunction thin-film diodes using polycrystalline oxide semiconducting thin films. Al-oped ZnO (AZO) and Mg-doped CuCrO₂ (CuCrO₂:Mg) thin films used as n- and p-type oxide semiconducting layers, respectively, were prepared on glass substrates by r.f. magnetron sputtering using a powder target. The resulting p-type CuCrO₂:Mg thin films prepared with a Mg content of 7 at.% exhibited at resistivity as low as 1.3x10^-2Ωcm and a band-gap energy of 3.3 eV. The voltage-current (V-I) characteristic of a pn junction fabricated using p⁺-CuCrO₂:Mg and n⁺-AZO thin films exhibited an ohmic, or linear, relationship. In addition, a pin heterojunction diode was fabricated by depositing high resistivity undoped ZnO and CuCrO₂ thin-film layers, or i-layers, between the n⁺-AZO and the p⁺-CuCrO₂:Mg thin-film layers. The resulting p⁺-CuCrO₂:Mg/i-CuCrO₂/i-ZnO/n⁺-AZO thin-film pin junction diode exhibited a rectifying V-I characteristic and a photovoltage under UV light illumination.

Citation Download Citation

Tadatsugu Minami, Hideki Tanaka, Takahiro Shimakawa, and Toshihiro Miyata "Diode UV detectors using oxide semiconductor thin films deposited by magnetron sputtering", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.521590

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