Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode

Guang Wu; Chunyuan Zhou; Xiuliang Chen; Xianghe Li; Heping Zeng

doi:10.1117/12.520253

12 May 2004 Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode

Guang Wu, Chunyuan Zhou, Xiuliang Chen, Xianghe Li, Heping Zeng

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520253
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability P_d about 1.3×10^-5 and 1.6×10^-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of P_d/η as 1.7×10^-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained P_d/η as 8.9×10^-4 per pulse.

Citation Download Citation

Guang Wu, Chunyuan Zhou, Xiuliang Chen, Xianghe Li, and Heping Zeng "Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.520253

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