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Proceedings Article

Differential luminescence thermometry in semiconductor laser cooling

[+] Author Affiliations
Babak Imangholi, Michael P. Hasselbeck, Daniel A. Bender, Chengao Wang, Mansoor Sheik-Bahae

Univ. of New Mexico

Richard I. Epstein

Los Alamos National Lab. and Univ. of New Mexico

Sarah Kurtz

National Renewable Energy Lab.

Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151C (February 28, 2006); doi:10.1117/12.646346
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From Conference Volume 6115

  • Physics and Simulation of Optoelectronic Devices XIV
  • Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa
  • San Jose, CA | January 21, 2006

abstract

We demonstrate a non-contact, spectroscopic technique to measure the temperature change of semiconductors with very high precision. A temperature resolution of less than 100 μK has been obtained with bulk GaAs. This scheme finds application in experiments to study laser cooling of solids. We measure a record external quantum efficiency of 99% for a GaAs device.

© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Babak Imangholi ; Michael P. Hasselbeck ; Daniel A. Bender ; Chengao Wang ; Mansoor Sheik-Bahae, et al.
"Differential luminescence thermometry in semiconductor laser cooling", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151C (February 28, 2006); doi:10.1117/12.646346; http://dx.doi.org/10.1117/12.646346


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