Paper
26 September 2007 Far infrared and terahertz quantum well intra-subband photodetector (QWISP)
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Abstract
We describe a new device concept for far infrared (FIR) / terahertz (THz) radiation detection based on the use of dopant-assisted intra-subband absorption mechanism in quantum wells. We compare the Quantum Well Intra-Subband Photodetector (QWISP) to the FIR/THz quantum-well infrared photodetector (QWIP) and heterojunction internal photoemission (HIP) devices to clarify the device concept. We demonstrate QWISP's effectiveness through theoretical simulations by comparing it with the FIR/THz QWIP with comparable dark current levels and peak spectral positions. In particular, our modeling results show that in a device designed for ~110 μm peak response, the QWISP peak absorption coefficient and responsivity, respectively, are approximately 100 and 10 times strong than those for the FIR/THz QWIP. The QWISP is a compact device with normal incidence response, does not require very low barriers, and is compatible with existing GaAs focal-plane array technology.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Z.-Y. Ting, Yia-Chung Chang, Sumith V. Bandara, and Sarath D. Gunapala "Far infrared and terahertz quantum well intra-subband photodetector (QWISP)", Proc. SPIE 6660, Infrared Systems and Photoelectronic Technology II, 66600F (26 September 2007); https://doi.org/10.1117/12.735138
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum well infrared photodetectors

Quantum wells

Absorption

Sensors

Doping

Electrons

Long wavelength infrared

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