Development of silicon-on-insulator waveguide technology

Timo T. Aalto; Mikko Harjanne; Markku Kapulainen; Paivi Heimala; Matti J. Leppihalme

doi:10.1117/12.537540

28 May 2004 Development of silicon-on-insulator waveguide technology

Timo T. Aalto, Mikko Harjanne, Markku Kapulainen, Paivi Heimala, Matti J. Leppihalme

Proceedings Volume 5355, Integrated Optics: Devices, Materials, and Technologies VIII; (2004) https://doi.org/10.1117/12.537540
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 μm thick SOI ridge waveguides and a very fast thermo-optical switch are reported. Propagation loss in a very long spiral waveguide down to 0.3 dB/cm, waveguide birefringence below 10^-4, and a switching frequency up to 167 kHz were obtained. A very promising multi-step patterning principle for SOI waveguides is described together with many practical application examples.

Citation Download Citation

Timo T. Aalto, Mikko Harjanne, Markku Kapulainen, Paivi Heimala, and Matti J. Leppihalme "Development of silicon-on-insulator waveguide technology", Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); https://doi.org/10.1117/12.537540

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