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Proceedings Article

Over 100-mW blue-violet laser diodes for Blu-ray Disc system

[+] Author Affiliations
Takeharu Asano, Keigo Aga

Sony Corp. (Japan)

Motonubu Takeya, Takashi Mizuno, Shinro Ikeda, Yoshio Ohfuji, Tsuyoshi Fujimoto, Kenji Oikawa, Shu Goto, Toshihiro Hashizu, Masao Ikeda

Sony Shiroishi Semiconductor, Inc. (Japan)

Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, 297 (May 11, 2004); doi:10.1117/12.533187
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From Conference Volume 5365

  • Novel In-Plane Semiconductor Lasers III
  • Claire F. Gmachl; David P. Bour
  • San Jose, CA, United States | January 26, 2004

abstract

400-nm-band GaN-based blue-violet laser diodes (LDs) operating with a high output power of over 100 mW have been successfully fabricated. A new ridge structure, in which the outside of the ridge was covered with a stacked layer of Si on SiO2 and the ridge width was as narrow as 1.4 μm, was applied to realize the stable lateral-mode operation. A layer structure around the active layer was carefully designed so as to ensure a high COD level. The lasers have been operated stably for more than 500 h under 130-mW pulsed operation at 60°C. From ambient temperature dependence of the device lifetime, the empirical activation energy was estimated as 0.32 eV. These results indicate that this LD is suitable for next-generation Blu-ray Disc system.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Takeharu Asano ; Motonubu Takeya ; Takashi Mizuno ; Shinro Ikeda ; Yoshio Ohfuji, et al.
"Over 100-mW blue-violet laser diodes for Blu-ray Disc system", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, 297 (May 11, 2004); doi:10.1117/12.533187; http://dx.doi.org/10.1117/12.533187


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