This paper reports on the use of a seeded vapour phase technique to grow bulk crystals of CdTe onto commercially available 50 mm diameter (211)B GaAs substrates. High quality crystals, several mm in thickness were grown on the GaAs at linear growth rates of ~ 120 μm/h. Characterisation by double and triple axis XRD showed the best crystals to have θ-2θ FWHMθ values of ~ 24 arc sec corresponding to low strain dispersion (< 2×10-4). Rocking curve scans included two to three sharp peaks, indicative of some small mosaicity. When mapped across a the surface of the crystal, the FWHM was uniform and < 93 arc sec. Contactless resistivity showed a similar degree of uniformity with a mean value of 4.4 × 109 ± 1.6 × 109 Ω cm. Infrared microscopy showed that within the resolution of the microscope (~ 5 μm) there were very few Te inclusions.© (2007) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.