Large-area InAlAs/InGaAs single-photon-counting avalanche photodiodes

Joseph C. Boisvert; Geoffrey S. Kinsey; Denton McAlister; Takahiro Isshiki; Rengarajan Sudharsanan; Michael Krainak

doi:10.1117/12.541547

13 September 2004 Large-area InAlAs/InGaAs single-photon-counting avalanche photodiodes

Joseph C. Boisvert, Geoffrey S. Kinsey, Denton McAlister, Takahiro Isshiki, Rengarajan Sudharsanan, Michael Krainak

Proceedings Volume 5412, Laser Radar Technology and Applications IX; (2004) https://doi.org/10.1117/12.541547
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

InAlAs/InGaAs avalanche photodiodes (APDs) have been fabricated and characterized in linear mode operation as photon counting detectors. Dark current, dark count, dynamic range, pulse shapes, and counting statistics are presented on 75 μm and 200 μm diameter APDs.

Citation Download Citation

Joseph C. Boisvert, Geoffrey S. Kinsey, Denton McAlister, Takahiro Isshiki, Rengarajan Sudharsanan, and Michael Krainak "Large-area InAlAs/InGaAs single-photon-counting avalanche photodiodes", Proc. SPIE 5412, Laser Radar Technology and Applications IX, (13 September 2004); https://doi.org/10.1117/12.541547

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