Characterization of a thulium-doped silica-based optical fibre for S-band amplification

Wilfried Blanc; Pavel Peterka; Basile Faure; Bernard Dussardier; Gérard Monnom; Ivan Kašík; Jiři Kaňka; David Simpson; Greg Baxter

doi:10.1117/12.675682

18 April 2006 Characterization of a thulium-doped silica-based optical fibre for S-band amplification

Wilfried Blanc, Pavel Peterka, Basile Faure, Bernard Dussardier, Gérard Monnom, Ivan Kašík, Jiři Kaňka, David Simpson, Greg Baxter

Author Affiliations +

Proceedings Volume 6180, Photonics, Devices, and Systems III; 61800V (2006) https://doi.org/10.1117/12.675682
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic

Abstract

Thulium-Doped Fiber Amplifier (TDFA) are considered for long-haul transmission systems as they allow amplification in the S-band (1.46- 1.53 μm) thanks to the Tm³⁺ emission at 1.47 μm from the ³H₄-³F₄ transition. Presently TDFA are fluoride based because of the low phonon energy of this glass. But as it presents some drawbacks (reliability, splice to silica, ...), we propose to realize a silica-based TDFA. The fibre under investigation in this article has a high A1₂O₃ concentration in order to improve the efficiency of the 1.47 μm-thulium emission. The fiber has a low Tm concentration, around 40 ppm mol, a 16.5×10^-3 refractive index and a core radius of 2.3 μm. Lifetime from the ³H₄ and ³F₄ levels were measured to be 58 μs and 540 μs, respectively. Gain measurements were conducted using a single wavelength pumping scheme at 1060 nm and 1 W of pump power. Although the highest measured gain was 0.9 dB for a 4m long fiber, this experimental result was compared with numerical modeling. From these simulations, we estimate the characteristics of the fibre to increase the gain up to 20 dB.

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Wilfried Blanc, Pavel Peterka, Basile Faure, Bernard Dussardier, Gérard Monnom, Ivan Kašík, Jiři Kaňka, David Simpson, and Greg Baxter "Characterization of a thulium-doped silica-based optical fibre for S-band amplification", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61800V (18 April 2006); https://doi.org/10.1117/12.675682

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