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Proceedings Article

Enhanced polarization-independent optical ring resonators on silicon-on-insulator

[+] Author Affiliations
William R. Headley, Graham T. Reed, Frederic Gardes

Univ. of Surrey (United Kingdom)

Ansheng Liu, Mario Paniccia

Intel Corp. (USA)

Proc. SPIE 5730, Optoelectronic Integration on Silicon II, 195 (March 14, 2005); doi:10.1117/12.590354
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From Conference Volume 5730

  • Optoelectronic Integration on Silicon II
  • Joel A. Kubby; Ghassan E. Jabbour
  • San Jose, California, United States | January 22, 2005

abstract

Recently, we have realised a polarisation independent optical racetrack resonator whose resonant dips for TE and TM align to better than 1pm. The devices had a Free Spectral Range (FSR) of only several hundred picometres. This in large part was to the relatively large bend radius (~ 400μm) designed and fabricated with initial focus on producing low bend loss devices. Modelling of the bend loss of the same dimension devices shows that the bend radius can be reduced significantly (down to ~25μm) to produce race track ring resonator with an FSR that is approximately 400% larger than that of those previously fabricated, whilst retaining polarisation independence. This paper will focus on the proposed enhancement of these devices as well as the impetus for their investigation.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

William R. Headley ; Graham T. Reed ; Frederic Gardes ; Ansheng Liu and Mario Paniccia
"Enhanced polarization-independent optical ring resonators on silicon-on-insulator", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, 195 (March 14, 2005); doi:10.1117/12.590354; http://dx.doi.org/10.1117/12.590354


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