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Proceedings Article

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

[+] Author Affiliations
U. T. Schwarz, C. Lauterbach

Univ. Regensburg (Germany)

M. O. Schillgalies, C. Rumbolz, M. Furitsch, A. Lell, V. Härle

OSRAM Opto Semiconductors GmbH (Germany)

Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840K (April 14, 2006); doi:10.1117/12.662019
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From Conference Volume 6184

  • Semiconductor Lasers and Laser Dynamics II
  • Daan Lenstra; Markus Pessa; Ian H. White
  • Strasbourg, France | April 03, 2006

abstract

We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 μm narrow and a 10 μm wide ridge waveguide laser diode.

© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

U. T. Schwarz ; C. Lauterbach ; M. O. Schillgalies ; C. Rumbolz ; M. Furitsch, et al.
"Time-resolved scanning near-field microscopy of InGaN laser diode dynamics", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840K (April 14, 2006); doi:10.1117/12.662019; http://dx.doi.org/10.1117/12.662019


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