The structure and physical properties of ultra-thin, multi-element Si pin photodiode arrays for medical imaging applications

Bernd Tabbert; Chris Hicks; Ed Bartley; Hong Wu; Ilja Goushcha; Richard Metzler; Alexander O. Goushcha

doi:10.1117/12.595414

20 April 2005 The structure and physical properties of ultra-thin multi-element Si pin photodiode arrays for medical imaging applications

Bernd Tabbert, Chris Hicks, Ed Bartley, Hong Wu, Ilja Goushcha, Richard Metzler, Alexander O. Goushcha

Author Affiliations +

Proceedings Volume 5745, Medical Imaging 2005: Physics of Medical Imaging; (2005) https://doi.org/10.1117/12.595414
Event: Medical Imaging, 2005, San Diego, California, United States

Abstract

Key features of a novel pin photodiode array structure built on 30-μm, 75-μm, and 100-μm thick single Silicon dies are discussed for the first time. Results of comparative studies of opto-electrical properties for a wide range of element sizes from ~ 200 μm square to ~ 1 mm square with the gaps between the adjacent elements as small as <20 μm are presented. The internal quantum efficiency was close to 100%, crosstalk was smaller than 0.01% within the spectral range 400 to 800 nm. The crosstalk remained lower than 0.1% even in the case when the illuminated element was electrically isolated (open contact). Furthermore very low leakage current and high shunt resistance (above 1 GΩ) are characteristic for these devices. The results are imperative for creating of high quality imaging systems.

Citation Download Citation

Bernd Tabbert, Chris Hicks, Ed Bartley, Hong Wu, Ilja Goushcha, Richard Metzler, and Alexander O. Goushcha "The structure and physical properties of ultra-thin multi-element Si pin photodiode arrays for medical imaging applications", Proc. SPIE 5745, Medical Imaging 2005: Physics of Medical Imaging, (20 April 2005); https://doi.org/10.1117/12.595414

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