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Proceedings Article

Optical proximity correction for 0.13 μm SiGe:C BiCMOS

[+] Author Affiliations
S. Geisler

Technische Fachhochschule Wildau (Germany) and IHP Microelectronics (Germany)

J. Bauer, U. Haak, U. Jagdhold, R. Pliquett, E. Matthus

IHP Microelectronics (Germany)

R. Schrader, H. Wolf

Photronics MZD GmbH (Germany)

U. Baetz

Fraunhofer IPMS (Germany)

H. Beyer

Technische Fachhochschule Wildau (Germany)

M. Niehoff

Mentor Graphics (Germany)

Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679210 (April 17, 2008); doi:10.1117/12.798786
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From Conference Volume 6792

  • 24th European Mask and Lithography Conference
  • Dresden, Germany | January 21, 2008

abstract

We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

S. Geisler ; J. Bauer ; U. Haak ; U. Jagdhold ; R. Pliquett, et al.
"Optical proximity correction for 0.13 μm SiGe:C BiCMOS", Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679210 (April 17, 2008); doi:10.1117/12.798786; http://dx.doi.org/10.1117/12.798786


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