Materials for future lithography

Seung Wook Chang; Da Yang; Junyan Dai; Nelson Felix; Daniel Bratton; Kousuke Tsuchiya; Young-Je Kwark; Juan-Pablo Bravo-Vasquez; Christopher K. Ober; Heidi B. Cao; Hai Deng

doi:10.1117/12.607235

4 May 2005 Materials for future lithography (Invited Paper)

Seung Wook Chang, Da Yang, Junyan Dai, Nelson Felix, Daniel Bratton, Kousuke Tsuchiya, Young-Je Kwark, Juan-Pablo Bravo-Vasquez, Christopher K. Ober, Heidi B. Cao, Hai Deng

Author Affiliations +

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.607235
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (T_g) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

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Seung Wook Chang, Da Yang, Junyan Dai, Nelson Felix, Daniel Bratton, Kousuke Tsuchiya, Young-Je Kwark, Juan-Pablo Bravo-Vasquez, Christopher K. Ober, Heidi B. Cao, and Hai Deng "Materials for future lithography (Invited Paper)", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.607235

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