Hg3In2Te6: a promising material for optoelectronic devices

Peter Gorley; Zinaida Grushka; Yarema Radevych; Olena Grushka; Ivan Zabolotsky

doi:10.1117/12.778954

30 October 2007 Hg₃In₂Te₆: a promising material for optoelectronic devices

Peter Gorley, Zinaida Grushka, Yarema Radevych, Olena Grushka, Ivan Zabolotsky

Proceedings Volume 6796, Photonics North 2007; 67961W (2007) https://doi.org/10.1117/12.778954
Event: Photonics North 2007, 2007, Ottawa, Canada

Abstract

This paper is dedicated to the investigation of stoichiometric defect semiconductors, allowing extremely high vacancy concentrations of 10²¹ cm^-3, determining their unusual physical properties. The material studied, Hg₃In₂Te₆, is of high interest for creation of efficient photonic structures: self-calibrating photodiodes, high-speed photodiodes, multi-element photodiodes with improved sensitivity, as well as optical filters for the spectral ranges of 2-28μm. Measurements of photoconductivity confirmed high sensitivity of this material in wide spectral ranges (λ=0.35-1.85 μm), including the areas of sensitivity for CdS, CdSe, GaAs, Si and Ge. In comparison with the latter, Hg₃In₂Te₆ is characterized with the lowest melting temperature (983K) that allows reduction of energy consumption during the synthesis process. The experimental results prove high photoconductive quantum yield for Hg₃In₂Te₆ at hν = 0.74 - 3.5 eV. For the sake of comparison, we are also presenting the investigation results concerning CdIn₂Te₄ crystals. In general, defect semiconductors are ideal for creation of surface-barrier structures and hetero-junctions because of low surface state concentration and atmospheric oxygen absorption rate.

Citation Download Citation

Peter Gorley, Zinaida Grushka, Yarema Radevych, Olena Grushka, and Ivan Zabolotsky "Hg₃In₂Te₆: a promising material for optoelectronic devices", Proc. SPIE 6796, Photonics North 2007, 67961W (30 October 2007); https://doi.org/10.1117/12.778954

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