Paper
21 December 2007 An astable multivibrator formed by a novel NDRHBT
Author Affiliations +
Proceedings Volume 6798, Microelectronics: Design, Technology, and Packaging III; 679813 (2007) https://doi.org/10.1117/12.755007
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia
Abstract
The earlier astable multivibrator formed by silicon tunnel diode has the disadvantage of low speed and non-modulation. NDRHBT is a novel type of HBT with NDR characteristics and high speed. Its NDR characteristics can be modulated by the base voltage VBE or base current IB. So the astable multivibrator formed by NDRHBT has the advantage of high speed, high frequency, bistability, and frequency modulation by VBE or IB. Thus, it can be applied widely in high frequency oscillation circuits and high speed-digital circuits. In this paper, it is demonstrated that the frequency of the astable multivibrator can be modulated by base voltage VBE. The experimental result shows that the frequency of time interval between two adjacent pulses f1 varies from 7×104Hz down to 2.5×104Hz as VBE changes from 4.5V to 6.5V and exhibits near a linear relationship. So it is can be used as an efficient voltage controlled frequency modulator for pulse signal in high speed digital circuits.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pingjuan Niu, Weilian Guo, Xin Yu, Xiaoyun Li, Shilin Zhang, Haitao Qi, Changyun Miao, Xiaoli Wang, and Wei Wang "An astable multivibrator formed by a novel NDRHBT", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679813 (21 December 2007); https://doi.org/10.1117/12.755007
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KEYWORDS
Resistance

Modulation

Diodes

Etching

Frequency modulation

Inductance

Silicon

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