Performance analysis of 256 element linear 2.4µm InGaAs photovoltaic detector arrays

Kefeng Zhang; Hengjing Tang; Xiaoli Wu; Xue Li; Yonggang Zhang; Haimei Gong

doi:10.1117/12.755774

8 January 2008 Performance analysis of 256 element linear 2.4μm InGaAs photovoltaic detector arrays

Kefeng Zhang, Hengjing Tang, Xiaoli Wu, Xue Li, Yonggang Zhang, Haimei Gong

Proceedings Volume 6835, Infrared Materials, Devices, and Applications; 683506 (2008) https://doi.org/10.1117/12.755774
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

In this work, the performance of In_xGa_1-xAs photovoltaic detectors with cutoff wavelength of 2.4μm(x=0.78) were investigated. The detector arrays were fabricated using gas source molecular beam epitaxy (GSMBE) grown material and arranged in linear arrays of 256 pixels of 56×56μm² dimension. The transition of the large lattice mismatch (1.6%) between the substrate and the absorption layer was dealt with a linearity transformation In_xGa_1-xAs buffer layer. The dark-current performance achieved is as low as 10^-10A at 300K and a bias voltage of -0.5V. This corresponds to a figure of merit for detector resistance R₀ times detector pixel area A of R₀A =3.5~7.5Ωcm² at 300K and quantum efficiency above 60%. Room temperature D*(λ_p) values beyond 3×10¹⁰cmHz^1/2W^-1.

Citation Download Citation

Kefeng Zhang, Hengjing Tang, Xiaoli Wu, Xue Li, Yonggang Zhang, and Haimei Gong "Performance analysis of 256 element linear 2.4μm InGaAs photovoltaic detector arrays", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683506 (8 January 2008); https://doi.org/10.1117/12.755774

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