This paper reports the thermoelectric properties of intrinsic N-type bismuth telluride (Bi2Te3) thin films (2.5-10 μm thickness). These films were deposited using radio frequency (R.F.) magnetron sputtering. These properties include; Seebeck coefficient and electrical resistivity at different temperatures. It has been observed that the Seebeck coefficient and electrical resistivity of thin films are approximately -150 μV/°C and 4 x 10-5 ohm-m at room temperature, respectively. The maximum value of Seebeck coefficient of approximately -287 μV/°C was observed at 54 °C for a film thickness of 9.8 μm. The microstructural characteristics of the thin films were investigated using Scanning Electron Microscopy and X-Ray Diffraction analysis. It was observed that the thicker the Bi2Te3 film, the larger the grain size. The observed grain sizes were approximately 900 nm and 1500 nm for Bi2Te3 film of 2.6 μm and 9.8 μm thicknesses, respectively. The XRD analysis indicated the presence of rhombohedral (Bi2Te3) crystal structures.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.