Focal plane arrays based on quantum dot infrared photodetectors

Manijeh Razeghi; Wei Zhang; Ho-Chul Lim; Stanley Tsao; John Szafraniec; Maho Taguchi; Bijan Movaghar

doi:10.1117/12.607534

28 June 2005 Focal plane arrays based on quantum dot infrared photodetectors

Manijeh Razeghi, Wei Zhang, Ho-Chul Lim, Stanley Tsao, John Szafraniec, Maho Taguchi, Bijan Movaghar

Proceedings Volume 5838, Nanotechnology II; (2005) https://doi.org/10.1117/12.607534
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

Here we report the first demonstrations of infrared focal plane array (FPA) based on GaAs and InP based quantum dot infrared photodetectors (QDIPs). QDIPs are extension of quantum well infrared photodetectors (QWIPs) and are predicted to outperform QWIPs due to their potential advantages including normally incident absorption, higher responsivity and high temperature operation. Two material systems have been studied: InGaAs/InGaP QDIPs on GaAs substrates and InAs QDIP on InP substrates. An InGaAs/InGaP QDIP has been grown on GaAs substrate by LP-MOCVD. Photoresponse was observed at temperatures up to 200 K with a peak wavelength of 4.7 μm and cutoff wavelength of 5.2 μm. A detectivity of 1.2x10¹¹ cmHz^1/2/W was obtained at T=77 K and bias of -0.9 V, which is the highest for QDIPs grown by MOCVD. An InAs QDIP structure has also been grown on InP substrate by LP-MOCVD. Photoresponse of normal incidence was observed at temperature up to 160K with a peak wavelength of 6.4 μm and cutoff wavelength of 6.6 μm. A detectivity of 1.0x10¹⁰ cmHz^1/2/W was obtained at 77K at biases of -1.1 V, which is the first and highest detectivity reported for QDIP on InP substrate. 256×256 detector arrays were fabricated first time in the world for both the GaAs and InP based QDIPs. Dry etching and indium bump bonding were used to hybridize the arrays to a Litton readout integrated circuit. For the InGaAs/InGaP QDIP FPA, thermal imaging was achieved at temperatures up to 120 K. At T=77K, the noise equivalent temperature difference (NEDT) was measured as 0.509K with a 300K background and f/2.3 optics. For the InP based QDIPs, thermal imaging was achieved at 77 K.

Citation Download Citation

Manijeh Razeghi, Wei Zhang, Ho-Chul Lim, Stanley Tsao, John Szafraniec, Maho Taguchi, and Bijan Movaghar "Focal plane arrays based on quantum dot infrared photodetectors", Proc. SPIE 5838, Nanotechnology II, (28 June 2005); https://doi.org/10.1117/12.607534

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available