Paper
28 June 2005 A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node
Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, Sang-Soo Choi
Author Affiliations +
Abstract
In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, and Sang-Soo Choi "A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617065
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Cited by 7 scholarly publications.
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KEYWORDS
Beam shaping

Critical dimension metrology

Backscatter

Cadmium

Electrons

Vestigial sideband modulation

Error analysis

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