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Proceedings Article

A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node

[+] Author Affiliations
Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, Sang-Soo Choi

PKL Co., Ltd. (South Korea)

Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, 58 (July 13, 2005); doi:10.1117/12.617065
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From Conference Volume 5853

  • Photomask and Next-Generation Lithography Mask Technology XII
  • Masanori Komuro
  • Yokohama, Japan | April 13, 2005

abstract

In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Eui-Sang Park ; Hyun-Joon Cho ; Jin-Min Kim and Sang-Soo Choi
"A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, 58 (July 13, 2005); doi:10.1117/12.617065; http://dx.doi.org/10.1117/12.617065


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